Выпуск: 40 , Том: 15 , Год издания: 2003

The real defect structure of LiB3O5 crystal grown by a top seeded solution growth method has been observed using x-ray projection and reflective topography. Space mapping of such defects as growth sector boundaries, striation and dislocations have been produced by the topography analysis. The density of the dislocations is as low as <30 cm(-2). It has been shown that the dominant part of the dislocations detected is generated in the under-seed zone of the crystal.