SiNx:H films of different compositions grown on glass and silicon substrates using plasma chemical vapor deposition at a temperature of 380°C have been subjected to pulsed laser annealings. The treat ments are performed using titanium-sapphire laser radiation with a wavelength of 800 nm and a pulse duration of 30 fs. Structural changes in the films are studied using Raman spectroscopy. Amorphous silicon nanoclusters are detected in asgrown films with molar fractions of excess silicon of ˜1/5 and larger. Conditions required for pulsed crystallization of nanoclusters were determined. According to the Raman data, no silicon clusters were detected in as grown films with a small amount of excess silicon (x > 1.25). Pulsed treatments resulted in the formation of silicon nanoclusters 1-2 nm in size in these films.
